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High Voltage, Low VCE(sat) IGBT
Short Circuit SOA Capability
IXSH 45N120
VCES IC25 VCE(sat)
= 1200 V = 75 A = 3V
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C, limited by leads TC = 90C TC = 25C, 1 ms VGE = 15 V, TJ = 125C, RG = 2.7 W Clamped inductive load, L = 30 mH VGE = 15 V, VCE = 0.6 * VCES, TJ = 125C RG = 22 W, non repetitive TC = 25C
Maximum Ratings 1200 1200 20 30 75 45 180 ICM = 90 @ 0.8 VCES 10 300 -55 ... +150 150 -55 ... +150 V V V V A A A A ms
TO-247 AD
G
C
E C = Collector, TAB = Collector
G = Gate, E = Emitter,
Features W C C C
q q
q
Mounting torque
1.13/10 Nm/lb.in.
q
6 300
g C
q
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
q
International standard package JEDEC TO-247 High frequency IGBT with guaranteed Short Circuit SOA capability Fast Fall Time for switching speeds up to 20 kHz 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1200 4 TJ = 25C TJ = 125C 6 8 400 1.2 100 3 V V
Applications
q q q
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 3 mA, VGE = 0 V = 4 mA, VCE = VGE
q
q
VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
mA mA nA V
AC motor speed control DC servo and robot drive Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Welding
Advantages
q
q
Easy to mount with 1 screw (isolated mounting screw hole) High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
92773F (7/00)
(c) 2000 IXYS All rights reserved
1-4
IXSH 45N120
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 26 170 4150 VCE = 25 V, VGE = 0 V, f = 1 MHz 285 65 150 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 45 75 80 250 400 1000 21 80 250 7.1 450 1200 27 200 60 100 S A pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.42 K/W 0.25 K/W
Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
TO-247 AD (IXSH) Outline
gfs IC(on) C ies Coes C res Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 ms, duty cycle d 2 % VGE = 15 V, VCE = 10 V
1.5 2.49
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
IXSH 45N120
Fig.1 Saturation Characteristics Fig.2 Output Characterstics
70 60
TJ = 25C
VGE = 15V
13V 11V
300
TJ = 25C
250
VGE = 15V
IC - Amperes
40 30 20 10
7V
IC - Amperes
50
200 150 100
11V 13V
9V
50
9V
0
0 0 1 2 3 4 5 0 2 4 6 8 10 12 14 16 18 20
VCE - Volts
VCE - Volts
Fig.3 Collector-Emitter Voltage vs. Gate-Emitter Voltage
10 9 8 7
TJ = 25C
Fig.4 Temperature Dependence of Output Saturation Voltage
1.8
VGE = 15V IC = 90A
1.6
VCE(sat) - Normalized
VCE - Volts
1.4 1.2 1.0 0.8 0.6 -50
IC = 45A
6 5 4 3 2 1 0 8 9 10 11 12 13 14 15
IC = 22.5A IC = 90A IC = 45A
IC = 22.5A
-25
0
25
50
75
100 125 150
VGE - Volts
TJ - Degrees C
Fig. 5 Input Admittance
90 80 70
Fig.6 Temperature Dependence of Breakdown and Threshold Voltage
1.3
VCE = 10V
BV / V(th) - Normalized
1.2 1.1 1.0 0.9 0.8 0.7 -50
VGE(th) IC = 4mA
IC - Amperes
60 50 40 30 20 10 0
TJ = 25C TJ = 125C TJ = - 40C
BVCES IC = 3mA
4
5
6
7
8
9
10 11 12 13 14 15
-25
0
25
50
75
100 125 150
VGE - Volts
TJ - Degrees C
(c) 2000 IXYS All rights reserved
3-4
IXSH 45N120
Fig.7 Turn-Off Energy per Pulse and Fall Time on Collector Current
3000 2750 60 50 2600
TJ = 125C IC = 45A Eoff
Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time on RG
40
TJ = 125C RG = 10W
tfi - nanoseconds
tfi - nanoseconds
2400
Eoff - millijoules
2500 2250 2000 1750 1500
tfi
40 30 20 10 0 100
2200
Eoff
30
2000
25
1800
0
20
40
60
80
0
10
20
30
40
20 50
IC - Amperes
RG - Ohms
Fig.9
15 12
Gate Charge Characteristic Curve
100
Fig.10 Turn-Off Safe Operating Area
IC = 45A VCE = 500V
10
TJ = 125C RG= 2.7W dV/dt < 6V/ns
9 6 3 0 0 50 100 150 200
IC - Amperes
VGE - Volts
1
0.1
0.01 0 200 400 600 800 1000 1200
Qg - nanocoulombs
VCE - Volts
Fig.11 Transient Thermal Impedance
1
D=0.5
ZthJC (K/W)
0.1
D=0.2 D=0.1 D=0.05 D=0.02 D = Duty Cycle
0.01 D=0.01
Single Pulse
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - seconds
(c) 2000 IXYS All rights reserved
Eoff - millijoules
tfi
35
4-4

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